Electrical Characteristics (T A = 25°C unless otherwise speci?ed)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Device
Min.
Typ.* Max. Units
EMITTER
V F
? V F
? T A
V R
C J
Input Forward Voltage
Forward Voltage Temp. Coef?cient
Reverse Voltage
Junction Capacitance
I F = 5mA
I F = 2mA
I R = 10μA
V F = 0V, f = 1.0MHz
All
All
All
All
6
1.25
-1.75
18
1.5
V
mV/°C
V
pF
DETECTOR
BV CEO
Collector-Emitter Breakdown Voltage I C = 1.0mA, I F = 0
All
30
100
V
BV CBO
BV EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I C = 10μA, I F = 0
I E = 10μA, I F = 0
All
All
30
5
120
10
V
V
I CER
C CE
C CB
C EB
Collector-Emitter Dark Current
Capacitance, Collector to Emitter
Capacitance, Collector to Base
Capacitance, Emitter to Base
V CE = 10V, I F = 0,
R BE = 1M ?
V CE = 0, f = 1MHz
V CB = 0, f = 1MHz
V EB = 0, f = 1MHz
All
All
All
All
1
10
80
15
100
nA
pF
pF
pF
Isolation Characteristics
Symbol
V ISO
R ISO
Characteristic
Input-Output Isolation
Voltage (10)
Isolation Resistance (10)
Test Conditions
f = 60Hz, t = 1 sec.
V I-O = 500 VDC, T A = 25°C
Device
All
All
Min. Typ.* Max.
7500
10 11
Units
Vac(peak)
?
C ISO
Isolation Capacitance
(9)
V I-O = 0, f = 1 MHz
All
0.4
0.6
pF
CM H
Common Mode Transient
V CM = 50 V P-P1 , R L = 750 ? ,
MCT5210M/11M
5000
V/μs
I F = 0
Rejection – Output HIGH
V CM = 50 V P-P , R L = 1K ? ,
I F = 0
MCT5201M
CM L
Common Mode Transient
V CM = 50 V P-P1 , R L = 750 ? ,
MCT5210M/11M
5000
V/μs
I F =1.6mA
Rejection – Output LOW
V CM = 50 V P-P1 , R L = 1K ? ,
MCT5201M
I F = 5mA
*All typical T A = 25°C
?1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
3
www.fairchildsemi.com
相关PDF资料
MCT62W OPTOCOUPLER TRANS-OUT 2CH 8-DIP
MCT9001S OPTOCOUPLER TRANS-OUT 2CH 8-SMD
MCZ33099EGR2 IC VREG ALTERNATOR ADAPT 16-SOIC
MCZ33291LEGR2 IC SWITCH 8X LOSIDE W/SPI 24SOIC
MCZ33789AE IC SBC W/PWR SUPPLY 64LQFP
MCZ33800EKR2 IC ENGINE CTRL SW/DVR 54-SOIC
MCZ33810EK IC IGNITION INJECTOR 32-SOIC
MCZ33812AEKR2 IC DVR IGNITION/INJECTOR 32SOIC
相关代理商/技术参数
MCT5201SR2VM 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, SURFACE MOUNT LEAD BEND, VDE, T&R - Tape and Reel
MCT5201SVM 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, SURFACE MOUNT LEAD BEND, VDE - Bulk
MCT5201TM 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND - Bulk
MCT5201TVM 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND, VDE - Bulk
MCT5201VM 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, VDE - Bulk
MCT5201W 功能描述:高速光耦合器 6-Pin Optocoupler Phototrans LoCurrent RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube
MCT5210 功能描述:高速光耦合器 DIP-6 PHOTO TRANS RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube
MCT5210 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P